BB102C 查看數據表（PDF） - Renesas Electronics

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BB102C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB102C

S11 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

—10

—.2

—5

—4

—3

—.4

—2

—.6

—.8 —1

—1.5

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 1000 MHz (50 MHz step)

S21 Parameter vs. Frequency

90¡ Scale: 1 / div.

120¡

60¡

150¡

30¡

180¡

0¡

—150¡

—30¡

—120¡

—60¡

—90¡

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 1000 MHz (50 MHz step)

S12 Parameter vs. Frequency

90¡ Scale: 0.01 / div.

120¡

60¡

150¡

30¡

180¡

0¡

—150¡

—30¡

—120¡

—90¡

—60¡

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 1000 MHz (50 MHz step)

S22 Parameter vs. Frequency

.8 1

.6

.4

.2

1.5

2

3

4

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

—10

—.2

—5

—4

—3

—.4

—2

—.6

—.8 —1

—1.5

Test Condition : VDS= 9 V , VG1 = 9 V

VG2S = 6 V , R G = 560 k Ω

50 1000 MHz (50 MHz step)

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