BB102M 查看數據表（PDF） - Renesas Electronics

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BB102M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB102M

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-587A (Z)

2nd. Edition

Mar. 2001

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise characteristics;

(NF = 2.1 dB typ. at f = 900 MHz)

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4(SOT-143Rmod)

Outline

MPAK-4

Notes:

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

1. Marking is “BW–”.

2. BB302M is individual type number of HITACHI BBFET.

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