BB102M 查看數據表（PDF） - Renesas Electronics

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BB102M

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Renesas Electronics 

BB102M

Main Characteristics

Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

Gate 2

RG

VG1

Gate 1

Drain

A

ID

Source

Application Circuit

VAGC = 6 to 0.3 V

BBFET

V DS = 9 V

RFC

Output

Input

RG

V GG = 9 V

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