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零件编号
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BB102M 查看數據表(PDF) - Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
BB102M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Electronics
BB102M Datasheet PDF : 13 Pages
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Noise Figure vs. Drain Current
4
3
2
V
DS
= 9 V
1
V
G1
= 9 V
V
G2S
= 6 V
R
G
= variable
f = 900 MHz
0
5 10 15 20 25 30 35 40
Drain Current I
D
(mA)
BB102M
Drain Current vs. Gate Resistance
40
V
DS
= 9 V
V
G1
= 9 V
V
G2S
= 6 V
30
20
10
0
10 20
50 100 200 500 1000
Gate Resistance R
G
(k
Ω
)
Gain Reduction vs.
Gate2 to Source Voltage
50
V
DS
= 9 V
40
V
G1
= 9 V
V
G2S
= 6 V
30
R
G
= 560 k
Ω
f = 900 MHz
20
10
0
1 2 34 5 6 7
Gate2 to Source Voltage V
G2S
(V)
Input Capacitance vs.
Gate2 to Source Voltage
3
2
1
V
DS
= 9 V
V
G1
= 9 V
R
G
= 560 k
Ω
f = 1 MHz
0
1 2 3 4 56
Gate2 to Source Voltage V
G2S
(V)
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