BB503C 查看數據表（PDF） - Hitachi -> Renesas Electronics

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BB503C

Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Hitachi -> Renesas Electronics 

BB503C

Drain Current vs. Gate1 Voltage

20

VDS = 5 V

RG = 68 kΩ

16

12

2V

8

3V

4

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

VDS = 5 V 4 V

RG = 33 kΩ

3V

24 f = 1 kHz

18

2V

12

6

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

VDS = 5 V

RG = 47 kΩ

24 f = 1 kHz

4V

3V

2V

18

12

6

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

30

VDS = 5 V

RG = 68 kΩ

24 f = 1 kHz

4V

3V

18

2V

12

6

VG2S = 1 V

0

1

2

3

4

5

Gate1 Voltage V G1 (V)

6

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