BC817-40W(2003) 查看數據表（PDF） - Diotec Semiconductor Germany

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BC817-40W
(Rev.:2003)

Surface mount Si-Epitaxial PlanarTransistors

Diotec Semiconductor Germany  

General Purpose Transistors

Characteristics, Tj = 25/C

Collector saturation voltage – Kollektor-Sättigungsspg.

IC = 500 mA, IB = 50 mA

VCEsat

Base saturation voltage – Basis-Sättigungsspannung

IC = 500 mA, IB = 50 mA

VBEsat

Base-Emitter voltage – Basis-Emitter-Spannung

VCE = 1 V, - IC = 500 mA

VBE

Collector-Base cutoff current – Kollektorreststrom

IE = 0, VCB = 20 V

ICB0

IE = 0, VCB = 20 V, Tj = 150/C

ICB0

Emitter-Base cutoff current – Emitterreststrom

IC = 0, VEB = 4 V

IEB0

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE = ie = 0, f = 1 MHz

CCB0

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Min.

BC 817W / BC 818W

Kennwerte, Tj = 25/C

Typ.

Max.

–

–

0.7 V

–

–

1.2 V

–

–

1.2 V

–

–

100 nA

–

–

5 :A

–

–

100 nA

100 MHz 170 MHz

–

–

6 pF

–

RthA

620 K/W 1)

BC 807W / BC 808W

Marking of available current gain

groups per type

Stempelung der lieferbaren Strom-

verstärkungsgruppen pro Typ

BC 817-16W = 6A

BC 817W = 6D

BC 818-16W = 6E

BC 818W = 6H

BC 817-25W = 6B

BC 818-25W = 6F

BC 817-40W = 6C

BC 818-40W = 6G

1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

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