FCX591 查看數據表（PDF） - Galaxy Semi-Conductor
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FCX591 Datasheet PDF : 3 Pages
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Production specification
PNP Silicon Planar Medium Power High Perormance Transistor
FCX591
FEATURES
z Complementary type:FCX491.
Pb
Lead-free
ORDERING INFORMATION
Type No.
Marking
FCX591
P1
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-5
ICM
Peak Pulse Current
-2
IC
Collector Current -Continuous
-1
IB
Base Current
-0.2
PD
Power Dissipation
1
Tj,Tstg
Junction and Storage Temperature
-65 to +150
Units
V
V
V
A
A
A
W
℃
E074
Rev.A
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