BC546 查看數據表（PDF） - General Semiconductor

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BC546

Small Signal Transistors (NPN)

General Semiconductor 

BC546 THRU BC549

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

h-Parameters at VCE = 5 V, IC = 2 mA,

f = 1 kHz,

Small Signal Current Gain

Current Gain Group A hfe

–

B hfe

–

C hfe

–

Input Impedance Current Gain Group A hie

1.6

B hie

3.2

C hie

6

Output Admittance Current Gain Group A hoe

–

B hoe

–

C hoe

–

Reverse Voltage Transfer Ratio

Current Gain Group A hre

–

B hre

–

C hre

–

DC Current Gain

at VCE = 5 V, IC = 10µA

Current Gain Group A hFE

–

B

hFE

–

C

hFE

–

at VCE = 5 V, IC = 2 mA

Current Gain Group A hFE

110

B

hFE

200

C

hFE

420

at VCE = 5 V, IC = 100 mA

Current Gain Group A

B

hFE

hFE

–

–

C

hFE

–

Thermal Resistance Junction to Ambient Air

RthJA

–

Collector Saturation Voltage

at IC = 10 mA, IB = 0.5 mA

at IC = 100 mA, IB = 5 mA

VCEsat

–

VCEsat

–

Base Saturation Voltage

at IC = 10 mA, IB = 0.5 mA

at IC = 100 mA, IB = 5 mA

VBEsat

–

VBEsat

–

Base-Emitter Voltage

at VCE = 5 V, IC = 2 mA

at VCE = 5 V, IC = 10 mA

VBE

580

VBE

–

Collector-Emitter Cutoff Current

at VCE = 80 V

at VCE = 50 V

BC546 ICES

–

BC547 ICES

–

at VCE = 30 V

BC548, BC549 ICES

–

at VCE = 80 V, Tj = 125 °C

at VCE = 50 V, Tj = 125 °C

BC546 ICES

–

BC547 ICES

–

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

Typ.

Max.

Unit

220

–

–

330

–

–

600

–

–

2.7

4.5

kΩ

4.5

8.5

kΩ

8.7

15

kΩ

18

30

µS

30

60

µS

60

110

µS

1.5 · 10–4 –

–

2 · 10–4

–

–

3 · 10–4

–

–

90

–

–

150

–

–

270

–

–

180

220

–

290

450

–

500

800

–

120

–

–

200

–

–

400

–

–

–

2501)

K/W

80

200

mV

200

600

mV

700

–

mV

900

–

mV

660

700

mV

–

720

mV

0.2

15

nA

0.2

15

nA

0.2

15

nA

–

4

µA

–

4

µA

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