BD237 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
BD237 Datasheet PDF : 3 Pages
| |||
UNISONIC TECHNOLOGIES CO., LTD
BD237
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
80
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
2
A
Collector Dissipation
PC
1.25
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-65~150
°C
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied. Absolute
maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
DC Current Gain
Transition Frequency
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE (1)
hFE (2)
fT
TEST CONDITIONS
MIN TYP MAX UNIT
IC=1mA, IE=0
IC=100mA, IB=0
100
V
80
V
IE=1mA, IC=0
VCB=100V, IE=0
5
V
100 µA
VEB=5V, IC=0
IC=1A, IB=100mA
1 mA
0.6 V
IC=150mA,VCE=2V
40
IC=1A,VCE=2V
25
IC=250mA, VCE=10V, f=10MHz 3
MHz
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
2 of 3
QW-R226-001, B
Share Link: 