BD536 查看數據表（PDF） - New Jersey Semiconductor
零件编号
产品描述 (功能)
生产厂家
BD536 Datasheet PDF : 2 Pages
| |||
^zml-Conau.cto'i Lp-toaucti, {Jnc.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD536
DESCRIPTION
• DC Current Gain -
: hFE = 40@ lc=-0.5A
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= -60V(Min)
• Complement to Type BD535
:'
APPLICATIONS
• Designed for use in medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCES
Collector-Emitter Voltage
-60
UNIT
V
V
• i
!
i 2 -•
3
PIN 1.BASE
2. COLLECTOR
S.BdlTTER
TO-220C package
•« B f
»
p
MuS* i"*' v *T
1
A*
*
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-8
A
IE
Emitter Current- Continuous
-8
A
IB
Base Current
Collector Power Dissipation
PC
Tj
Junction Temperature
-1
A
50
W
150
r
Tstg
Storage Temperature Range
-65-150
Dc
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.5 'CM/
Rth j-a
Thermal Resistance, Junction to Ambient
70
'CM/
1 1m«3V
L
1
K
D
f
H G *•
t1n— ; —
mm
DIN WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
Li 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
Sf^
2.50 2.70
1.29 1.31
6.45 O.DD
V 8.66 8.86
N.I Semi-CoiKluetors reserves the right to change tost conditions, parameter limits and package dimensions uiihot.it
noiicc. Inrbrmation rurni.shed by N.I Senii-('i)iuluclors is believed to he holh accurate and roliahle ;it the lime ori.'.oinjj
in pro-;-;. |lu\\c\er. N.I Seiiii-(_'(iiidiiciors assumes no responsibility lor an> errors or omission-, discovered in its use.
X.I Si'ini-Conductors enciuiraiics CUS|I>MH.TI< to verily Ihal Jnla--lKvK are ciin\-iit helbre placing orders.
Share Link: 