BD538 查看數據表（PDF） - SavantIC Semiconductor
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BD538 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD534/536/538
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat-1
VCEsat-2
VBE
ICBO
ICES
IEBO
hFE-1
Collector-emitter saturation voltage
IC=-2 A;IB=-0.2 A
Collector-emitter saturation voltage
IC=-6 A;IB=-0.6 A
Base-emitter on voltage
IC=-2A ; VCE=-2V
BD534
VCB=-45V; IE=0
Collector cut-off current BD536
VCB=-60V; IE=0
BD538
VCB=-80V; IE=0
BD534
VCE=-45V; VBE=0
Collector cut-off current BD536
VCE=-60V; VBE=0
BD538
VCE=-80V; VBE=0
Emitter cut-off current
VEB=5V; IC=0
DC current gain
BD534/536
BD538
IC=-10mA ; VCE=-5V
hFE-2
hFE-3
DC current gain
DC current gain
(All device)
Group: J
Group: K
IC=-0.5A ; VCE=-2V
IC=-2A ; VCE=-2V
hFE-4
DC current gain
(All device)
Group: J
Group: K
IC=-3A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-1V
MIN TYP. MAX UNIT
-0.8
V
-0.8
V
-1.5
V
-0.1
mA
-0.1
mA
-1
mA
20
15
40
30
75
40
100
15
20
3
12
MHz
2
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