BDW41 查看數據表（PDF） - New Jersey Semiconductor
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BDW41 Datasheet PDF : 2 Pages
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J
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, One.
Silicon NPN Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW41
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= SOV(Min)
• High DC Current Gain
:hFE=1000(Min)@lc=5A
• Low Collector Saturation Voltage
: VCE(satf 2.0V(Max.)@ lc= 5.0A
= 3.0V(Max.)@lc=10A
• Complement to Type BDW46
APPLICATIONS
• Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
15
A
le
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.5
A
85
W
150
•c
-55-150
r
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance.Junction to Case
MAX UNIT
1.47 'CM/
™
1' 1
11i
12 3
T2
-H<_ J,
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
-»— B—M
!?rJ-CH I r*-V-*j x- e
A
— «V
j
f
i
t
r- MLOOV
H "\
i) IV'
soi-. •
~t
y
~-»j ( a *~
C
*i
mm
DIM WIN mm
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
11 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensionswithout
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductorsencourages customers to verify that datasheets are current before placing orders.
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