BD908 查看數據表（PDF） - New Jersey Semiconductor
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BD908 Datasheet PDF : 2 Pages
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J^E.mi-Conducto'i I/ loaucti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD908
DESCRIPTION
• DC Current Gain -
: hFE = 40@lc=-0.5A
• Collector-Emitter Sustaining Voltage-
: VCEO(susr -60V(Min)
• Complement to Type BD907
APPLICATIONS
• Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25T )
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO Emitter-Base Voltage
-5
Ic
Collector Current-Continuous
-15
ICM
Collector Current-Peak
-20
IB
Base Current
-5
Collector Power Dissipation
PC
@ TC=25°C
90
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-65-150
UNIT
V
V
V
A
A
A
W
•c
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.38 'CM/
'. 1
' ;i
([i
123
•^
3
PIN 1.BASE
2. COLLECTOR
3 arflTTER
TO-220C package
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U ip
IT
A
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t- H ~* •» ' •• L
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K
0
TJ T
JJ
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1-
C
*
mm
HIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
j 0 44 046
K 13.20 13.40
L 1.10 1.30
Q 2 70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
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