BD908 查看數據表（PDF） - New Jersey Semiconductor
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BD908 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -50mA; IB= 0
VcE(sat)-i Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-10A;lB=-2.5A
VsE(sat) Base-Emitter Saturation Voltage
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
lc=-10A; IB=-2.5A
lc= -5A ; VCE= -4V
VCB= -60V; IE= 0
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; I0= 0
nFE-i
DC Current Gain
hFE-2
DC Current Gain
lc= -0.5A; VCE= -4V
lc= -5A; VCE= -4V
hpE-3
DC Current Gain
lc=-10A; VCE=-4V
fi
Current-Gain—Bandwidth Product lc= -0.5A; VCE= -4V; ftest= 1.0MHz
BD908
MIN MAX UNIT
-60
V
-1.0
V
-3.0
V
-2.5
V
-1.5
V
-0.5
mA
-1.0
mA
-1.0
rnA
40
250
15
150
5
'3.0
MHz
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