BGA2001 查看數據表（PDF） - NXP Semiconductors.

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BGA2001

Silicon MMIC amplifier

NXP Semiconductors. 

NXP Semiconductors

Silicon MMIC amplifier

Product specification

BGA2001

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VS

supply voltage

IS

supply current (DC)

Ptot

total power dissipation

Tstg

storage temperature

Tj

operating junction temperature

CONDITIONS

RF input AC coupled

forced by DC voltage on RF input

Ts  100 C

MIN.







65



MAX.

4.5

30

135

+150

150

UNIT

V

mA

mW

C

C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-s

thermal resistance from junction to soldering point

VALUE

350

UNIT

K/W

CHARACTERISTICS

RF input AC coupled; Tj = 25 C; unless otherwise specified.

SYMBOL

PARAMETER

IS

supply current

MSG

maximum stable gain

s212

insertion power gain

PL

load power

NF

noise figure

IP3(in)

input intercept point; note 1

CONDITIONS

MIN.

VVS-OUT = 1 V



VVS-OUT = 2.5 V

3

VVS-OUT = 4.5 V



VVS-OUT = 2.5 V;



IVS-OUT = 4 mA; f = 900 MHz

VVS-OUT = 2.5 V;



IVS-OUT = 4 mA; f = 1.8 GHz

VVS-OUT = 2.5 V;



IVS-OUT = 4 mA; f = 900 MHz

VVS-OUT = 2.5 V;



IVS-OUT = 4 mA; f = 1.8 GHz

at 1 dB gain compression point; 

VVS-OUT = 2.5 V;

IVS-OUT = 4.4 mA; f = 900 MHz;

VVS-OUT = 2.5 V;



IVS-OUT = 4 mA; f = 900 MHz;

S = opt

VVS-OUT = 2.5 V;



IVS-OUT = 4 mA; f = 1.8 GHz;

S = opt

VVS-OUT = 2.5 V;



IVS-OUT = 4.4 mA; f = 900 MHz

VVS-OUT = 2.5 V;



IVS-OUT = 4.5 mA; f = 1800 MHz

Note

1. See application note: RNR-T45-99-B-0513.

TYP.

0.7

4.5

11

22

19.5

18

14

2

1.3

1.3

7.4

4.5

MAX.



6





















UNIT

mA

mA

mA

dB

dB

dB

dB

dBm

dB

dB

dBm

dBm

1999 Aug 11

3

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