BGA420(2002) 查看數據表（PDF） - Infineon Technologies
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BGA420 Datasheet PDF : 6 Pages
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BGA420
Si-MMIC-Amplifier in SIEGET 25-Technologie
Cascadable 50 -gain block
Unconditionally stable
Gain |S21|2 = 13 dB at 1.8 GHz
IP3out = +13 dBm at 1.8 GHz
(VD = 3 V, ID = typ. 6.7 mA)
Noise figure NF = 2.3 dB at 1.8 GHz
Reverse isolation > 28 dB and
return loss IN / OUT > 12 dB at 1.8 GHz
3
4
2
1
VPS05605
VD
4
Circuit Diagram
3
OUT
1
IN
2
GND
EHA07385
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BGA420
BLs
1, IN 2, GND 3, OUT 4, VD SOT343
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation
TS = 110 °C
RF input power
Junction temperature
Ambient temperature
Storage temperature
Symbol
ID
VD
Ptot
PRFin
Tj
TA
Tstg
Value
15
6
90
0
150
-65 ... 150
-65 ... 150
Unit
mA
V
mW
dBm
°C
Thermal Resistance
Junction - soldering point1)
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
410
K/W
1
Jan-29-2002
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