BS109 查看數據表（PDF） - General Semiconductor

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BS109

DMOS Transistors (N-Channel)

General Semiconductor 

BS109

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0 V

V(BR)DSS

400

430

–

V

Gate-Body Leakage Current, Forward

at VGSF = 20 V, VDS = 0 V

IGSSF

–

–

100

nA

Gate-Body Leakage Current, Reverse

at VGSR = 20 V, VDS = 0 V

IGSSR

–

–

100

nA

Drain Cutoff Current

at VDS = 400 V, VGS = 0 V

IDSS

–

–

500

nA

Gate-Source Threshold Voltage

at VGS = VDS, ID = 250 µA

VGS(th)

1

1.5

2.5

V

Drain-Source ON Resistance

at VGS = 10 V, ID = 120 mA

RDS(on)

–

16

22

Ω

Capacitance

at VDS = 25 V, VGS = 0, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

CiSS

–

80

–

pF

COSS

–

20

–

pF

CrSS

–

10

–

pF

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

–

10

–

ns

toff

–

50

–

ns

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1501)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.

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