BSS123(2008) 查看數據表（PDF） - Diodes Incorporated.

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BSS123
(Rev.:2008)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Diodes Incorporated. 

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

0

1

2

3

4

5

VDS, DRAIN-SOURCE VOLTAGE (V)

Fig. 1 On-Region Characteristics

1.2

1.1

VDS = VGS

ID = 250µA

1

0.9

0.8

0.7

-50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (ºC)

Fig. 3 Gate Threshold Variation with Temperature

50

40

30

Ciss

20

10

Coss

Crss

0

0

5

10

15

20

25

VDS, DRAIN-SOURCE VOLTAGE (V)

Fig. 5 Typical Capacitance

BSS123

2.4

2.0

1.6

1.2

0.8

0.1

0.2

0.3

0.4

0.5

0.6

ID, DRAIN-SOURCE CURRENT (A)

Fig. 2 On-Resistance Variation with Gate Voltage

and Drain-Source Current

2.2

2

VGS = 10V

ID = 170m

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 -25 0

25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (ºC)

Fig. 4 On-Resistance Variation with Temperature

BSS123

Document number: DS30366 Rev.8 - 2

2 of 3

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May 2008

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