BU1010A 查看數據表（PDF） - Vishay Semiconductors
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BU1010A Datasheet PDF : 6 Pages
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BU1006A thru BU1010A
Vishay General Semiconductor
New Product
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward
voltage per diode (1)
IF = 5.0 A
TA = 25 °C
TA = 125 °C
VF
1.02
0.94
Maximum reverse current per diode
rated VR
TA = 25 °C
TA = 125 °C
IR
-
45
Typical junction capacitance per diode 4.0 V, 1 MHz
CJ
30
Note
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
MAX.
1.10
1.00
5.0
250
-
UNIT
V
µA
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006A
BU1008A
Typical thermal resistance
RJC (1)
3.0
RJA (2)
20
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU1010A
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1006A-M3/45
4.48
45
BU1006A-M3/51
4.48
51
BU1006A5S-M3/45
4.48
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
10
8 With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
6
TC
TC
4
2
0
0 20 40 60 80 100 120 140 160
Case Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
4
3
2
1
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Figure 2. Forward Current Derating Curve
www.vishay.com
For technical questions within your region, please contact one of the following: Document Number: 89294
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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