BU1010A5S-M3 查看數據表（PDF） - Vishay Semiconductors
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BU1010A5S-M3 Datasheet PDF : 6 Pages
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New Product
BU1006A thru BU1010A
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.125 (3.2) x 45°
Chamfer
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
0.085 (2.16)
+ ~~ -
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.080 (2.03)
0.065 (1.65)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.161 (4.10)
0.142 (3.60)
9°
TYP.
0.219 (5.55)
MAX.
0.134 (3.40)
0.087 (2.20)
0.740 (18.8)
0.720 (18.3)
5°
TYP.
0.315 (8.0)
0.276 (7.0)
0.028 (0.72)
0.020 (0.52)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
By Safety Requirements
2.5 mm MIN.
Document Number: 89294 For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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