BU1008-M3/45 查看數據表（PDF） - Vishay Semiconductors
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BU1008-M3/45 Datasheet PDF : 5 Pages
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www.vishay.com
BU1006, BU1008, BU1010
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU1006
Typical thermal resistance
RJC (1)
RJA (2)
Notes
(1) With 60 W air cooled heatsink
(2) Without heatsink, free air
BU1008
3.0
20
BU1010
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU1006-E3/45
4.55
45
BU1006-E3/51
4.55
51
BU1006-M3/45
4.55
45
BU10065S-E3/45
4.55
45
BASE QUANTITY
20
250
20
20
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)
DELIVERY MODE
Tube
Paper tray
Tube
Tube
12
10
8 With Heatsink
Sine-Wave, R-Load
TC Measured at Device Bottom
6
TC
TC
4
2
0
0 20 40 60 80 100 120 140 160
Case Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
24
20
16
12
8
4
0
0 1 2 3 4 5 6 7 8 9 10 11
Average Forward Current (A)
Fig. 3 - Forward Power Dissipation
4
3
2
1
Without Heatsink
Sine-Wave, R-Load
Free Air, TA
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Fig. 2 - Forward Current Derating Curve
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Fig. 4 - Typical Forward Characteristics Per Diode
Revision: 29-Aug-17
2
Document Number: 84801
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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