BU1008-E3/51 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
BU1008-E3/51 Datasheet PDF : 5 Pages
| |||
www.vishay.com
BU1006, BU1008, BU1010
Vishay General Semiconductor
1000
100
TJ = 150 °C
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type BU
0.125 (3.2) x 45°
Chamfer
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+ ~~ -
0.085 (2.16)
0.065 (1.65)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
Polarity shown on front side of case, positive lead beveled corner
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
0.161 (4.10)
0.142 (3.60)
9°
TYP.
View A
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.740 (18.8)
0.720 (18.3)
0.710 (18.0)
0.690 (17.5)
0.028 (0.72)
0.020 (0.52)
0.055 (1.385) REF.
0.64 (16.28) REF.
R 0.11
(2.78) REF.
0.094 (2.39) x 45° REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
Revision: 29-Aug-17
3
Document Number: 84801
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Share Link: 