BU10085S-E3 查看數據表（PDF） - Vishay Semiconductors
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BU10085S-E3 Datasheet PDF : 5 Pages
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www.vishay.com
FORMING SPECIFICATION: BU-5S in inches (millimeters)
0.125 (3.2) x 45°
Chamfer
0.880 (22.3)
0.860 (21.8)
0.160 (4.1)
0.140 (3.5)
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+
~~
0.085 (2.16)
0.065 (1.65)
-
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.080 (2.03)
0.065 (1.65)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
BU1006, BU1008, BU1010
Vishay General Semiconductor
0.161 (4.10)
0.142 (3.60)
9°
TYP.
0.219 (5.55)
MAX.
0.134 (3.40)
0.087 (2.20)
0.740 (18.8)
0.720 (18.3)
5°
TYP.
0.315 (8.0)
0.276 (7.0)
0.028 (0.72)
0.020 (0.52)
APPLICATION NOTE
1. Device UL approved for safety use dielectric strength of 1500 V
2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
3. Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
By Safety Requirements
2.5 mm MIN.
Revision: 29-Aug-17
4
Document Number: 84801
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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