BUK7520-100A 查看數據表（PDF） - NXP Semiconductors.

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BUK7520-100A

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

BUK7520-100A

N-channel TrenchMOS standard level FET

Rev. 2 — 2 February 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

„ AEC Q101 compliant

„ Low conduction losses due to low

on-state resistance

„ Suitable for standard level gate drive

sources

„ Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

„ 12 V, 24 V and 42 V loads

„ Automotive and general purpose

power switching

„ Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

VDS

drain-source

Tj ≥ 25 °C; Tj ≤ 175 °C

voltage

ID

drain current

VGS = 10 V; Tmb = 25 °C;

see Figure 1; see Figure 3

Ptot

total power

Tmb = 25 °C; see Figure 2

dissipation

Static characteristics

RDSon

drain-source

on-state

resistance

VGS = 10 V; ID = 25 A;

Tj = 175 °C; see Figure 12;

see Figure 13

VGS = 10 V; ID = 25 A;

Tj = 25 °C; see Figure 12;

see Figure 13

Avalanche ruggedness

EDS(AL)S

non-repetitive

ID = 60 A; Vsup ≤ 100 V;

drain-source

RGS = 50 Ω; VGS = 10 V;

avalanche energy Tj(init) = 25 °C; unclamped

Min Typ Max Unit

-

-

100 V

-

-

63 A

-

-

200 W

-

-

50 mΩ

-

17 20 mΩ

-

-

400 mJ

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