CF5010 查看數據表（PDF） - Nippon Precision Circuits
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CF5010 Datasheet PDF : 25 Pages
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SM5010 series
5010EA× series
3V operation: VDD = 2.7 to 3.6V, VSS = 0V, Ta = −10 to +70°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 2.7V, IOH = 2mA
VOL Q: Measurement cct 2, VDD = 2.7V, IOL = 2mA
VIH INHN
VIL INHN
IDD
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010EA1
5010EA2
RUP2 Measurement cct 4
Rf Measurement cct 5
RD Design value
CG
Design value. A monitor pattern on a wafer is tested.
CD
Rating
Unit
min
typ
max
2.1
2.4
–
V
–
0.3
0.5
V
2.0
–
–
V
–
–
0.5
V
–
4
8
mA
–
2.5
5
40
100
250
kΩ
80
200
500
kΩ
690
820
940
Ω
9
10
11
pF
13
15
17
5V operation: VDD = 4.5 to 5.5V, VSS = 0V, Ta = −40 to +85°C unless otherwise noted.
Parameter
Symbol
Condition
HIGH-level output voltage
LOW-level output voltage
HIGH-level input voltage
LOW-level input voltage
Current consumption
INHN pull-up resistance
Feedback resistance
Oscillator amplifier output
resistance
Built-in capacitance
VOH Q: Measurement cct 1, VDD = 4.5V, IOH = 3.2mA
VOL Q: Measurement cct 2, VDD = 4.5V, IOL = 3.2mA
VIH INHN
VIL INHN
IDD1
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 30MHz
5010EA1
5010EA2
IDD2
Measurement cct 3, load cct 1,
INHN = open, CL = 15pF, f = 40MHz
5010EA1
5010EA2
RUP2 Measurement cct 4
Rf Measurement cct 5
RD Design value
CG
Design value. A monitor pattern on a wafer is tested.
CD
Rating
Unit
min
typ
max
3.9
4.2
–
V
–
0.3
0.4
V
2.0
–
–
V
–
–
0.8
V
–
6
12
–
5
10
mA
–
9
18
–
6
12
40
100
250
kΩ
80
200
500
kΩ
690
820
940
Ω
9
10
11
pF
13
15
17
SEIKO NPC CORPORATION —11
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