CF750(1999) 查看數據表（PDF） - Infineon Technologies

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CF750
(Rev.:1999)

GaAs MMIC

Infineon Technologies 

CF 750

Electrical Characteristics of CF 750 in Amplifier Application

TA = 25 °C, VDGND = 3.8 V, RS = RL = 50 Ω, unless otherwise specified.

Amplifier

Application

Symbol

Limit Values

Unit Test Conditions

min. typ. max.

Power Gain

GPS

–

11 –

dB

ID = 2 mA,

f = 900 MHz

Noise Figure

NF

–

1.6 –

dB

ID = 2 mA,

f = 900 MHz

3rd Order

Intermodulation

IPIP3

–

–1 –

dBm ID = 2 mA,

f = 900 MHz

3rd Order

OPIP3

–

Intermodulation

10 –

dBm ID = 2 mA,

f = 900 MHz

Power Gain

GPS

–

10 –

dB

ID = 2 mA,

f = 1.8 GHz

Noise Figure

F

–

1.9 –

dB

ID = 2 mA,

f = 1.8 GHz

3rd Order

Intermodulation

IPIP3

–

–1 –

dBm ID = 2 mA,

f = 1.8 GHz

3rd Order

OPIP3

–

Intermodulation

9

–

dBm ID = 2 mA,

f = 1.8 GHz

Data Book

3

03.99

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