CHA5390TBF/24 查看數據表（PDF） - United Monolithic Semiconductors
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CHA5390TBF/24 Datasheet PDF : 6 Pages
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CHA5390TBF
24-30GHz Medium Power Amplifier
GaAs Monolithic Microwave IC in SMD leadless package
Description
The monolithic microwave IC (MMIC) in the
package is a high gain broadband four-
stage monolithic medium power amplifier. It
is designed for a wide range of applications,
from military to commercial communication
systems. The circuit is manufactured with a
PM-HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in a new SMD leadless chip
carrier.
SMD Package Dimensions
Main Features
■ Broadband performance: 24-30GHz
■ Small signal gain 21dB (typical)
■ Output power (P-1dB) 24dBm (typical)
■ Low DC power consumption: 460mA
■ SMD leadless package
■ Dimensions: 6.35 x 6.35 x 0.97 mm3
"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated by a triangle
on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the package (i.e. side with metallic pads)
is just for fabrication purposes and does NOT indicate the location of PIN
Ref. : DSCHA5390TBF2249 -06-Sept.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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