DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

CHA5390TBF/24 查看數據表(PDF) - United Monolithic Semiconductors

零件编号
产品描述 (功能)
生产厂家
CHA5390TBF/24
UMS
United Monolithic Semiconductors UMS
CHA5390TBF/24 Datasheet PDF : 6 Pages
1 2 3 4 5 6
CHA5390TBF
Schematic
24-30GHz Medium Power Amplifier
Typical Bias Conditions
for an ambient Temperature of +25°C
Symbol
Pin No.
Parameter
Vd1,2,3,4 5,7,9,10 & 11 Drain bias voltage
Vg1,2,3,4
1,2,3 & 4 Gate bias voltage
Id
5,7,9,10,11 Total drain current
All other pins are not used for this device.
Values Unit
5
V
-0.2
V
460 mA
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol
Parameter
Values
Unit
Vd
Drain bias voltage
6.0
V
Id
Drain bias current
720
mA
Vg
Gate bias voltage
-2.0 to +0.4
V
Pin
Maximum peak input power overdrive (2)
+15
dBm
Ta
Operating temperature range (3)
-40 to +70
°C
Tstg
Storage temperature range
-55 to +155
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.
(3) Upper temperature limit strongly dependent on motherboard design; ratings given for
ideal thermal coupling
Ref. : DSCHA5390TBF2249 -06-Sept.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]