CHA2395 查看數據表（PDF） - United Monolithic Semiconductors
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CHA2395 Datasheet PDF : 6 Pages
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CHA2395
36-40GHz Low Noise Very High Gain Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2395 is a four-stage monolithic low
noise amplifier. It is designed for a wide
range of applications, from military to
commercial communication systems.
The circuit is manufactured with a HEMT
In
process : 0.25µm gate length, via holes
through the substrate, air bridges and
electron beam gate lithography.
It is available in chip form.
Vd Vd
Out
Vg 1,2
Vg 3,4
Main Features
■ Broadband performances
■ 3.0dB Noise Figure
■ 30dB gain
■ ±1.0dB gain flatness
■ Low DC power consumption,
90mA@3.5V
■ Chip size : 2.07 X 1.11 X 0.10 mm
Typical on wafer measurements :
35
6
30
5
25
4
20
3
15
2
10
1
5
0
30 31 32 33 34 35 36 37 38 39 40
Frequency (GHz)
Main Characteristics
Tamb. = 25°C
Symbol
Parameter
Fop Operating frequency range
G Small signal gain
P1dB Output power at 1dB gain compression
NF Noise figure
Min Typ Max Unit
36
40 GHz
25
30
dB
8
10
dBm
3.0 4.0 dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHA23952240 -28-Aug.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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