CQY37N 查看數據表（PDF） - Vishay Semiconductors
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CQY37N Datasheet PDF : 5 Pages
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CQY37N
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
94 8638-2
DESCRIPTION
CQY37N is an infrared, 950 nm emitting diode in GaAs
technology molded in a miniature, clear plastic package with
lens.
FEATURES
• Package type: leaded
• Package form: T-¾
• Dimensions (in mm): Ø 1.8
• Peak wavelength: p = 950 nm
• High reliability
• Angle of half intensity: = ± 12°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector BPW17N
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• Radiation source in near infrared range
PRODUCT SUMMARY
COMPONENT
CQY37N
Ie (mW/sr)
5
Note
• Test conditions see table “Basic Characteristics“
(deg)
± 12
P (nm)
950
tr (ns)
800
ORDERING INFORMATION
ORDERING CODE
CQY37N
Note
• MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
Reverse voltage
Forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
tp 100 μs
t3s
Leads not soldered
VR
IF
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
100
2
160
100
- 25 to + 85
- 25 to + 100
245
450
UNIT
V
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81002
Rev. 1.7, 08-Mar-11
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
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