IS42S16100-6BLI 查看數據表（PDF） - Integrated Silicon Solution

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IS42S16100-6BLI

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

Integrated Silicon Solution 

IS42S16100

DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.)

Symbol Parameter

Test Condition

Speed Min. Max. Unit

Iil

Input Leakage Current 0V ≤ Vin ≤ VDD, with pins other than

–5

5

µA

the tested pin at 0V

Iol

Output Leakage Current Output is disabled, 0V ≤ Vout ≤ VDD

–5

5

µA

Voh

Output High Voltage Level Iout = –2 mA

2.4 —

V

Vol

Output Low Voltage Level Iout = +2 mA

—

0.4

V

Icc1

Operating Current(1,2)

One Bank Operation, CAS latency = 3 Com. -5

— 170 mA

Burst Length=1

Com. -6

— 160

trc ≥ trc (min.)

Com. -7

— 140

Iout = 0mA

Ind. -6

Ind. -7

— 170

— 160

Icc2p Precharge Standby Current CKE ≤ Vil (max)

tck = tck (min) Com. —

—

3

mA

Ind. —

—

4

Icc2ps (In Power-Down Mode)

tck = ∞

Com. —

—

2

Ind. —

—

—

Icc3n Active Standby Current CKE ≥ Vih (min)

tck = tck (min) —

—

40 mA

Icc3ns (In Non Power-Down Mode)

tck = ∞

Com. —

—

30

Ind. —

—

30

Icc4

Operating Current

tck = tck (min)

CAS latency = 3 Com. -5

(In Burst Mode)(1)

Iout = 0mA

Com. -6

Ind. -6

Com. -7

Ind. -7

CAS latency = 2 Com. -5

Com. -6

Ind. -6

Com. -7

Ind. -7

Icc5

Auto-Refresh Current

trc = trc (min)

CAS latency = 3 Com. -5

Com. -6

Ind. -6

Com. -7

Ind. -7

CAS latency = 2 Com. -5

Com. -6

Ind. -6

— 170 mA

— 150

— 170

— 130

— 150

— 170 mA

— 150

— 170

— 130

— 150

— 120 mA

— 100

— 110

— 70

— 90

— 120 mA

— 100

— 110

Com. -7

—

70

Ind. -7

—

90

Icc6

Self-Refresh Current

CKE ≤ 0.2V —

—

2

mA

Notes:

1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time in-

creases. Also note that a bypass capacitor of at least 0.01 µF should be inserted between Vdd and GND for each memory chip

to suppress power supply voltage noise (voltage drops) due to these transient currents.

2. Icc1 and Icc4 depend on the output load. The maximum values for Icc1 and Icc4 are obtained with the output open state.

6

Integrated Silicon Solution, Inc. — www.issi.com

Rev.  D

01/28/08

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