DCR1575SY32 查看數據表（PDF） - Dynex Semiconductor
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DCR1575SY32 Datasheet PDF : 8 Pages
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DCR1575SY
100000
Conditions:
Tj = 125˚C, VR = 800V,
IT = 2000A
Snubber 1µF, 11 Ohms
10000
Max. QS
Min. QS
1000
100
0.1
IT
QS
tp = 2ms
dI/dt
IRM
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
Fig.4 Stored charge
100
Table gives pulse power PGM in Watts
Pulse Width Frequency Hz
µs
100
200
500
1ms
10ms
50 100 400
150 150 150
150 150 125
150 150 100
150 100 25
20 - -
10
50W
20W
10W
5W
2W
Tj = 125˚C
1
Upper
Limit 99%
Lower Limit
1%
Tj
=
Tj =
25˚C
-40˚C
0.1
0.001
0.01
0.1
1.0
10
Gate trigger current, IGT - (A)
Fig.5 Gate characteristics
0.1
Anode side cooled
0.01
Double side cooled
0.001
0.0001
0.001
0.01
Conduction
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Effective thermal resistance
Junction to case ˚C/W
Double side
0.0095
0.0105
0.0112
0.0139
Anode side
0.019
0.020
0.0207
0.0234
0.1
1
Time - (s)
10
100
Fig.6 Transient thermal impedance - junction to case
100
Tcase = 125˚C
With 50% VRRM
80
7.0
60
6.0
5.0
40 I2t
4.0
3.0
20
2.0
1.0
0
0
1
10 1
5 10
50
ms
Cycles at 50Hz
Duration
Fig.7 Surge (non-repetitive) on-state current vs time (with
50% VRRM at Tcase = 125˚C)
6/8
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