BCR3AS-12 查看數據表（PDF） - Kersemi Electronic Co., Ltd.
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BCR3AS-12 Datasheet PDF : 13 Pages
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Performance Curves
Maximum On-State Characteristics
102
7
5
3
2
101
7
5
Tj = 150°C
3
2
100
7
5
3
Tj = 25°C
2
10–1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Gate Characteristics (I, II and III)
5
3
2
101
PGM = 3W
7
5
IGM =
3
PG(AV) = 0.3W
0.5A
2
100
IFGT I, IRGT III
7
5
IRGT I
3
2
VGD = 0.1V
10–1
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Current (mA)
Gate Trigger Voltage vs.
Junction Temperature
103
7
Typical Example
5
4
3
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Rated Surge On-State Current
40
35
30
25
20
15
10
5
0
100 2 3 4 5 7 101 2 3 4 5 7 102
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
103
7
Typical Example
5
4
IRGT III
3
2
102
7 IFGT I, IRGT I
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120140 160
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
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