TISP2072F3SL 查看數據表（PDF） - Power Innovations

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TISP2072F3SL

DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

Power Innovations 

TISP2072F3, TISP2082F3

DUAL SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

MARCH 1994 - REVISED SEPTEMBER 1997

electrical characteristics for the T and G or the R and G terminals, TJ = 25°C (Continued)

PARAMETER

TEST CONDITIONS

TISP2072F3 TISP2082F3

MIN MAX MIN MAX

UNIT

V(BO) Breakover voltage

dv/dt = ±250 V/ms,

Source Resistance = 300 Ω

±72

±82

V

Impulse breakover volt- dv/dt = ±1000 V/µs, di/dt < 20 A/µs

V(BO) age

Source Resistance = 50 Ω

±84†

±94†

V

I(BO) Breakover current

dv/dt = ±250 V/ms,

Source Resistance = 300 Ω

±0.15 ±0.6 ±0.15 ±0.6

A

VT

IH

dv/dt

ID

On-state voltage

Holding current

Critical rate of rise of

off-state voltage

Off-state current

Coff Off-state capacitance

IT = ±5 A, tW = 100 µs

di/dt = -/+30 mA/ms

Linear voltage ramp,

Maximum ramp value < 0.85V(BR)MIN

VD = ±50 V

f = 100 kHz, Vd = 100 mV VD = 0,

Third terminal voltage = 0 VD = -5 V

(see Notes 6 and 7)

VD = -50 V

±3

±3

±0.15

±0.15

±5

±5

±10

±10

77† 130 77† 130

42† 70 42† 70

19† 30 19† 30

V

A

kV/µs

µA

pF

pF

pF

NOTES: 6 These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is

connected to the guard terminal of the bridge.

7. Further details on capacitance are given in the Applications Information section.

PARAMETER MEASUREMENT INFORMATION

+i

ITSP

Quadrant I

Switching

Characteristic

V(BR)M

-v

VDRM

VD

I(BR)

V(BR)

IDRM

I(BO)

V(BO)

ITSM

IT

VT

IH

ID

ID

IH

VT

IT

ITSM

V(BO)

I(BO)

IDRM

V(BR)

I(BR)

+v

VD

VDRM

V(BR)M

Quadrant III

Switching

Characteristic

ITSP

-i

PMXXAA

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS

The high level characteristics for terminals R and T are not guaranteed.

PRODUCT INFORMATION

3

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