TGA8310(2002) 查看數據表（PDF） - TriQuint Semiconductor

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TGA8310
(Rev.:2002)

2 - 20 GHz Low Noise Amplifier

TriQuint Semiconductor 

Product Data Sheet

June 12, 2002

TGA8310-SCC

TABLE III

AUTOPROBE FET PARAMETER MEASUREMENT CONDITIONS

FET Parameters

IDSS : Maximum drain current (IDS) with gate voltage

(VGS) at zero volts.

( ) IDSS − IDS 1

Gm : Transconductance; VG1

VP : Pinch-Off Voltage; VGS for IDS = 0.5 mA/mm of

gate width.

VBVGD : Breakdown Voltage, Gate-to-Drain; gate-to-

drain breakdown current (IBD) = 1.0 mA/mm

of gate width.

VBVGS : Breakdown Voltage, Gate-to-Source; gate-to-

source breakdown current (IBS) = 1.0 mA/mm

of gate width.

Test Conditions

VGS = 0.0 V, drain voltage (VDS) is swept from 0.5 V

up to a maximum of 3.5 V in search of the maximum

value of IDS; voltage for IDSS is recorded as VDSP.

For all material types, VDS is swept between 0.5 V

and VDSP in search of the maximum value of Ids.

This maximum IDS is recorded as IDS1. For

Intermediate and Power material, IDS1 is measured

at VGS = VG1 = -0.5 V. For Low Noise, HFET and

pHEMT material, VGS = VG1 = -0.25 V. For

LNBECOLC, use VGS = VG1 = -0.10 V.

VDS fixed at 2.0 V, VGS is swept to bring IDS to

0.5 mA/mm.

Drain fixed at ground, source not connected

(floating), 1.0 mA/mm forced into gate, gate-to-drain

voltage (VGD) measured is VBDGD and recorded as

BVGD; this cannot be measured if there are other

DC connections between gate-drain, gate-source or

drain-source.

Source fixed at ground, drain not connected

(floating), 1.0 mA/mm forced into gate, gate-to-

source voltage (VGS) measured is VBDGS and recorded

as BVGS; this cannot be measured if there are other

DC connections between gate-drain, gate-source or

drain-source.

TriQuint Semiconductor Texas Phone : (972)994 8465 Fax: (972)994 8504 Web: www.triquint.com

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