DGS10-018A 查看數據表（PDF） - IXYS CORPORATION
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DGS10-018A Datasheet PDF : 2 Pages
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20
10
A
IF
1
0.1
TVJ =
125°C
25°C
300
pF
CJ
100
DGS 10-015A DGSK 20-015A
DGS 10-018A DGSK 20-018A
0.01
0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 typ. forward characteristics
TVJ = 125°C
10
0.1
1
10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
ZthJC
0.1
Single Pulse
Outline (center pin only for DGSK types)
0.01
0.00001
0.0001
0.001
0.01
0.1
Fig. 3 typ. thermal impedance junction to case
DGS10-015/018BS
1 s 10
t
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
Dim. Millimeter
Min. Max.
A 12.70 13.97
B 14.73 16.00
C 9.91 10.66
D 3.54 4.08
E 5.85 6.85
F 2.54 3.18
G 1.15 1.65
H 2.79 5.84
J 0.64 1.01
K 2.54 BSC
M 4.32 4.82
N 1.14 1.39
Q 0.38 0.56
R 2.29 2.79
Inches
Min. Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100 BSC
0.170 0.190
0.045 0.055
0.015 0.022
0.090 0.110
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