AM81214-030 查看數據表（PDF） - Advanced Semiconductor
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AM81214-030 Datasheet PDF : 1 Pages
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AM81214-030
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI AM81214-030 is Designed for
1215 – 1400 MHz, L-Band Radar
Applications.
FEATURES:
• Internal Input/Output Matching Network
• PG = 7.2 dB at 5.0 W(peak)/1400 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC
2.75 A
VCC
32 V
PDISS
63 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θJC
2.4 °C/W
PACKAGE STYLE .250 2L FLG
COMMON BASE
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 10 mA
BVCER
IC = 20 mA
RBE = 10 Ω
BVEBO
IE = 1.0 mA
ICES
VCE = 28 V
hFE
VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
55
55
3.5
5.0
15
150
UNITS
V
V
V
mA
---
PIN
26
36
W
PG
VCC = 28 V
PIN = 5.0 W f = 1215 to 1400 MHz
7.2
8.5
dB
ηC
45
49
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1
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