GP400DDS12 查看數據表（PDF） - Dynex Semiconductor

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GP400DDS12

Powerline N-Channel Dual Switch IGBT Module

Dynex Semiconductor 

ELECTRICAL CHARACTERISTICS

T = 25˚C unless stated otherwise.

case

Symbol

Parameter

ICES

Collector cut-off current

IGES

VGE(TH)

Gate leakage current

Gate threshold voltage

VCE(SAT) Collector-emitter saturation voltage

IF

Diode forward current

IFM Diode maximum forward current

VF

Diode forward voltage

C

Input capacitance

ies

LM

Module inductance

GP400DDS12

Conditions

Min. Typ. Max. Units

VGE = 0V, VCE = VCES

-

V = 0V, V = V , T = 125˚C -

GE

CE

CES case

VGE = ±20V, VCE = 0V

-

IC = 120mA, VGE = VCE

4

VGE = 15V, IC = 400A

-

VGE = 15V, IC = 400A, Tcase = 125˚C -

DC

-

-

1 mA

-

50 mA

-

±4 µA

-

7.5 V

2.7 3.5 V

3.2 4.0 V

- 400 A

tp = 1ms

-

- 800 A

IF = 400A

- 2.5 3.0 V

IF = 400A, Tcase = 125˚C

- 2.4 2.9 V

V = 25V, V = 0V, f = 1MHz -

CE

GE

45

-

nF

-

-

20

-

nH

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

3/10

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