BCW66 查看數據表（PDF） - Foshan Blue Rocket Electronics Co.,Ltd.

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BCW66

Silicon NPN transistor in a SOT-23 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

BCW66

Rev.F Apr.-2017

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

符号

Symbol

VCBO

Collector to Emitter Voltage

VCEO

Emitter to Base Voltage

VEBO

Collector Current(DC)

IC

Peak Collector Current

ICM

Peak Base Current

IB

Collector Power Dissipation

PC

Junction Temperature

Tj

Storage Temperature Range

Tstg

数值

Rating

75

45

5.0

800

1.0

100

330

150

-55～150

单位

Unit

V

V

V

mA

A

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown Voltage

符号

测试条件

Symbol

Test Conditions

VCBO IC=10μA

Collector to Emitter Breakdown Voltage VCEO ICEO=10mA

Emitter to Base Breakdown Voltage

VEBO IEBO=10μA

Collector-Emitter Cut-off Current

ICES VCB=45 V

Emitter Base Cut-Off Current

IEBO VEB=4.0V

hFE(1) VCE=1.0V IC=100mA

DC Current Gain

hFE(2) VCE=1.0V IC=10mA

hFE(3) VCE=2.0V IC=500mA

Collector to Emitter Saturation Voltage

VCE(sat)(1) IC=100mA

VCE(sat)(2) IC=500mA

IB=10mA

IB=50mA

Base to Emitter Saturation Voltage

Transition Frequency

Output Capacitance

VBE(sat)

fT

Cobo

IC=500mA

VCE=10V

f=100MHz

VCB=10V

IB=50mA

IC=20mA

f=1.0MHz

Input Capacitance

Noise Figure

Turn-On Time

Turn-Off Time

Cibo VEB=0.5V f=1.0MHz

NF

VCE=5.0V

Rg=1.0kΩ

IC=0.2mA

ton IC=10IB1=-10IB2=150mA

toff

RL=150Ω

最小值 典型值 最大值 单位

Min Typ Max Unit

75

V

45

V

5.0

V

0.1 μA

0.1 μA

100

630

75

35

0.3 V

0.7 V

2.0 V

100

MHz

8.0 12 pF

80 pF

2.0 10 dB

0.1 μs

0.4 μs

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