DTA123J 查看數據表（PDF） - Unspecified

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DTA123J

Bias Resistor Transistor

Unspecified 

SEMICONDUCTOR

TECHNICAL DATA

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

• Simplifies Circuit Design

• Reduces Board Space and Component Count

Absolute maximum ratings(Ta=25 )

Parameter

Symbol

Value

Unit

Supply voltage

VCC

-50

V

Input voltage

VIN

-12 ~ 5

V

Output current

IO

-100

mA

IC(MAX)

-100

Power dissipation

Pd

300

mW

Junction temperature

Tj

150

℃

Storage temperature

Tstg

-55~150

℃

DTA123J

B

K

C

EE

1 2 3J

H

1. EMITTER(GND)

2. COLLECTOR(Output)

3. BASE(Input)

DIM MILLIMETERS

A

3.25 MAX

B

4.20 MAX

C

0.48 MAX

D

1.52+_ 0.1

E

1.27

F

15.30 +_ 0.20

G

0.76

H

45

J

0.51 MAX

K

0.25

TO-92M

R1

IN 3

R2

2 OUT

1 GND

IN

OUT

GND

Electrical characteristics (Ta=25℃)

Parameter

Symbol

Input voltage

V (off)

V (on)

Output voltage

VO(on)

Input current

II

Output current

IO(off)

DC current gain

GI

Input resistance

Resistance ratio

R1

R2/R1

Transition frequency

fT

Min.

-0.5

80

1.54

17

Typ

Max.

Unit

V

-1.1

-0.1

-0.3

V

-3.6

㎃

-0.5

㎂

2.2

2.86

㏀

21

26

250

㎒

Conditions

Vcc=-5V, Io=-100uA

Vo=0.3V, Io=-5mA

Io/Ii=-5mA/-0.25mA

Vi=-5V

Vcc=-50V ,Vi=0

Vo=-5V, Io=-10mA

Vo=-10V ,Io=-5㎃,f=100㎒

2012.01.30

Revision No : 0

1/2

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