EFC6601R 查看數據表（PDF） - ON Semiconductor
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EFC6601R Datasheet PDF : 8 Pages
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EFC6601R
Test circuits are example of measuring FET1 side
Test Circuit 1
ISSS
Test Circuit 2
IGSS
S2
G2
A
S2
G2
G1
VSS
S1
Test Circuit 3
VGS(off)
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
VGS
S1
A
VSS
Test Circuit 5
RSS(on)
S2
IS
G2
G1
A
VGS
S1
Test Circuit 4
| yfs |
S2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
A
G1
VGS
S1
Test Circuit 6
VF(S-S)
S2
4.5V
G2
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
IF
G1
VGS
V
S1
Test Circuit 7
td(on), tr, td(off), tf
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
G1
R
PG
S2
RL
V
S1
VDD
VGS=0V G1
S1
Test Circuit 8
Qg
V
When FET1 is
measured,+4.5V is added to
VGS of FET2.
G2
IG =1mA
G1
R
PG
50Ω
S2
A
RL
S1
VDD When FET1 is measured,
Gate and Source of FET2
are short-circuited.
No. A2151-3/8
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