FJV3105RMTF 查看數據表（PDF） - Fairchild Semiconductor

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FJV3105RMTF

NPN Epitaxial Silicon Transistor with Bias Resistor

Fairchild Semiconductor 

November 2013

FJV3105R

NPN Epitaxial Silicon Transistor with Bias Resistor

Features

• 100 mA Output Current Capability

• Built-in Bias Resistor (R1 = 4.7 kΩ, R2 = 10 kΩ)

Application

• Switching, Interface, and Driver Circuits

• Inverters

• Digital Applications in Industrial Segments

3

2

1 SOT-23

1. Base 2. Emitter 3. Collector

Ordering Information

Part Number

FJV3105RMTF

Top Mark

R25

Description

Transistors with built-in resistors can be excellent

space- and cost-saving solutions by reducing compo-

nent count and simplifying circuit design.

Equivalent Circuit

C

R1

B

R2

E

Package

SOT-23 3L

Packing Method

Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

VCBO

VCEO

VEBO

IC

TJ

TSTG

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Junction Temperature

Storage Temperature

Value

50

50

10

100

150

-55 to 150

Unit

V

V

V

mA

°C

°C

© 2002 Fairchild Semiconductor Corporation

FJV3105R Rev. 1.1.2

1

www.fairchildsemi.com

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