ZDT751 查看數據表（PDF） - Diodes Incorporated.

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ZDT751

SM-8 DUAL PNP MEDIUM POWER TRANSISTORS

Diodes Incorporated. 

ZDT751

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -80

V

IC=-100µA, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO -60

V

IC=-10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO -5

V

IE=-100µA, IC=0

Collector Cutoff

Current

ICBO

Emitter Cutoff Current IEBO

Collector-Emitter

Saturation Voltage

VCE(sat)

Base-Emitter

Saturation Voltage

VBE(sat)

-0.1 µA

-10

µA

-0.1 µA

-0.15 -0.3 V

-0.28 -0.5 V

-0.9 -1.25 V

VCB=-60V

VCB=-60V,Tamb=100°C

VEB=-4V, IE=0

IC=1A, IB=-100mA*

IC=2A, IB=-200mA*

IC=1A, IB=-100mA*

Base-Emitter

Turn-On Voltage

VBE(on)

-0.8 -1

V

IC=-1A, VCE=-2V*

Static Forward Current hFE

Transfer Ratio

Transition Frequency fT

70

200

100 200 300

80

170

40

80

IC=-50mA, VCE=-2V*

IC=-500mA, VCE=-2V*

IC=-1A, VCE=-2V*

IC=-2A, VCE=-2V*

100 140

MHz

IC=-100mA, VCE=-5V

f=100MHz

Output Capacitance

Cobo

30

pF

VCB=-10V f=1MHz

Switching Times

ton

toff

40

ns

IC=-500mA, VCC=-10V

IB1=IB2=-50mA

450

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

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