FQD17P06 查看數據表（PDF） - Fairchild Semiconductor
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FQD17P06 Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number
FQD17P06TM
FQU17P06TU
Top Mark
FQD17P06
FQU17P06
Package
DPAK
IPAK
Packing Method
Tape and Reel
Tube
Reel Size
330 mm
N/A
Tape Width
16 mm
N/A
Quantity
2500 units
70 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = -250 µA
ID = -250 µA, Referenced to 25°C
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 125°C
VGS = -25 V, VDS = 0 V
VGS = 25 V, VDS = 0 V
-60 --
--
V
-- -0.06 -- V/°C
--
--
-1
µA
--
--
-10
µA
--
-- -100 nA
--
--
100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
VGS = -10 V, ID = -6.0 A
VDS = -30 V, ID = -6.0 A
-2.0 --
-4.0
V
-- 0.11 0.135 Ω
--
8.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 690 900 pF
-- 325 420 pF
--
80 105 pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -8.5 A,
RG = 25 Ω
--
13
35
ns
--
100 210
ns
--
22
55
ns
(Note 4)
--
60
130
ns
VDS = -48 V, ID = -17 A,
--
21
27
nC
VGS = -10 V
--
4.2
--
nC
(Note 4)
--
10
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = -12 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -17 A,
dIF / dt = 100 A/µs
NOTES:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2.4 mH, IAS = -12 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD ≤ -17 A, di/dt ≤ 300 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
--
--
-12
A
--
--
-48
A
--
--
-4.0
V
--
92
--
ns
-- 0.32
--
µC
©2001 Fairchild Semiconductor Corporation
2
FQD17P06 / FQU17P06 Rev C3
www.fairchildsemi.com
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