FX20ASJ-06 查看數據表（PDF） - Powerex
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FX20ASJ-06 Datasheet PDF : 4 Pages
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PRELIMINARY NSootimcee: pTahriasmisentroict alimfinitsalasrpeescuifbicjeactitotno. change.
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
Tch = 25°C
ID = –20A
–8
VDS =
–10V
–6
–20V
–40V
–4
–2
0
0
10 20 30 40 50
GATE CHARGE Qg (nC)
MITSUBISHI Pch POWER MOSFET
FX20ASJ-06
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
VGS = 0V
Pulse Test
–40
TC =
–30
125°C
75°C
–20
25°C
–10
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7 VGS = –10V
ID = 1/2ID
5
4
Pulse Test
3
2
100
7
5
4
3
2
10–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
ID = –1mA
–3.2
–2.4
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
101
7
5 D = 1.0
3 0.5
2
0.2
100
7
5
3
2
10–1
7
5
3
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
0.1
0.05
0.02
0.01
Single Pulse
PDM
tw
T
D= tw
T
10–2
10–42 3
5 710–32 3
5 710–22 3
5 710–12 3
5 7 100 2 3
5 7 101 2 3
5 7 102
PULSE WIDTH tw (s)
Jan.1999
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