LET9060S(2003) 查看數據表（PDF） - STMicroelectronics

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LET9060S
(Rev.:2003)

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

STMicroelectronics 

LET9060S

ELECTRICAL SPECIFICATION (TCASE = 25 °C)

STATIC

Symbol

V(BR)DSS

IDSS

IGSS

VGS(Q)

VDS(ON)

GFS

CISS

COSS

CRSS

VGS = 0 V

VGS = 0 V

VGS = 5 V

VDS = 26 V

VGS = 10 V

VDS = 10 V

VGS = 0 V

VGS = 0 V

VGS = 0 V

Test Conditions

IDS = 1 mA

VDS = 26 V

VDS = 0 V

ID = 100 mA

ID = 3 A

ID = 3 A

VDS = 26 V

VDS = 26 V

VDS = 26 V

f = 1 MHz

f = 1 MHz

f = 1 MHz

DYNAMIC (f = 945 MHz)

Symbol

Test Conditions

GP

VDD = 26 V IDQ = 250 mA POUT = 60 W PEP

ηD

VDD = 26 V IDQ = 250 mA POUT = 60 W PEP

IMD3

VDD = 26 V IDQ = 250 mA POUT = 60 W PEP

P1dB

VDD = 26 V IDQ = 250 mA

GP

VDD = 26 V IDQ = 250 mA POUT = 60 W

ηD

VDD = 26 V IDQ = 250 mA POUT = 60 W

Load

VDD = 26 V IDQ = 250 mA POUT = 60 W

mismatch ALL PHASE ANGLES

DYNAMIC (f = 925 - 960 MHz)

Symbol

Test Conditions

P1dB

VDD = 26 V IDQ = 250 mA

GP

VDD = 26 V IDQ = 250 mA POUT = 60 W

ηD

VDD = 26 V IDQ = 250 mA POUT = 60 W

Min.

65

2.0

2.5

Typ.

0.7

74

40

2.8

Max. Unit

V

1

µA

1

µA

5.0

V

0.8

V

mho

pF

pF

pF

Ref. 7143417B

Min.

17

10:1

Typ.

47

70

16.7

61

Max. Unit

dB

%

-28 dBc

W

dB

%

VSWR

Min. Typ. Max. Unit

65

W

16

dB

56

%

2/10

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