GTL2010 查看數據表（PDF） - NXP Semiconductors.
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GTL2010 Datasheet PDF : 20 Pages
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NXP Semiconductors
GTL2010
10-bit bidirectional low voltage translator
11. Static characteristics
Table 9. Static characteristics
Tamb = −40 °C to +85 °C, unless otherwise specified.
Symbol Parameter
Conditions
VOL
VIK
ILI(G)
Cig
Cio(off)
LOW-level output voltage VCC = 3.0 V; VSREF = 1.365 V;
VSn or VDn = 0.175 V; Iclamp = 15.2 mA
input clamping voltage
II = −18 mA; VGREF = 0 V
gate input leakage current VI = 5 V; VGREF = 0 V
input capacitance at gate VI = 3 V or 0 V
off-state input/output
capacitance
VO = 3 V or 0 V; VGREF = 0 V
Cio(on)
on-state input/output
capacitance
VO = 3 V or 0 V; VGREF = 3 V
Ron
ON-state resistance
VI = 0 V; IO = 64 mA
VGREF = 4.5 V
VGREF = 3 V
VGREF = 2.3 V
VGREF = 1.5 V
VI = 0 V; IO = 30 mA; VGREF = 1.5 V
VI = 2.4 V; IO = 15 mA; VGREF = 4.5 V
VI = 2.4 V; IO = 15 mA; VGREF = 3 V
VI = 1.7 V; IO = 15 mA; VGREF = 2.3 V
Min
-
-
-
-
-
-
[2]
-
-
-
-
[2] -
[2] -
[2] -
[2] -
Typ[1] Max
260 350
Unit
mV
-
−1.2 V
-
5
µA
56
-
pF
7.4
-
pF
18.6 -
pF
3.5
5
Ω
4.4
7
Ω
5.5
9
Ω
67
115 Ω
9
15
Ω
7
10
Ω
58
80
Ω
50
70
Ω
[1] All typical values are measured at Tamb = 25 °C.
[2] Measured by the voltage drop between the Sn and the Dn terminals at the indicated current through the switch. ON-state resistance is
determined by the lowest voltage of the two (Sn or Dn) terminals.
GTL2010_6
Product data sheet
Rev. 06 — 3 March 2008
© NXP B.V. 2008. All rights reserved.
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