HCF4520BM1 查看數據表（PDF） - STMicroelectronics
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HCF4520BM1 Datasheet PDF : 12 Pages
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HCF4520B
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200KΩ, tr = tf = 20 ns)
Symbol
Parameter
VDD (V)
tPLH tPHL Propagation Delay Time
5
Clock or Enable to Output
10
15
tPLH tPHL Propagation Delay Time
5
Reset to Output
10
15
tTLH tTHL Transition Time
5
10
15
tW Clock Pulse Width
5
10
15
tW Reset Pulse Width
5
10
15
tW Enable Pulse Width
5
10
15
tr , tf
Clock or Enable Rise and
Fall Time
5
10
15
fMAX Maximum Clock
5
Frequency
10
15
tr , tf Clock or Enable Rise and
5
Fall Time
10
15
(*) Typical temperature coefficient for all VDD value is 0.3 %/°C.
Test Condition
Value (*)
Unit
Min.
200
100
70
250
110
80
400
200
140
1.5
3
4
Typ.
280
115
80
330
130
90
100
50
40
100
50
35
125
55
40
200
100
70
3
6
8
Max.
560
230
160
650
225
170
200
100
80
15
15
5
15
5
5
ns
ns
ns
ns
ns
ns
µs
MHz
µs
6/12
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