HZU6.2Z 查看數據表（PDF） - Renesas Electronics

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HZU6.2Z

Silicon Epitaxial Planar Zener Diode for Surge Absorb

Renesas Electronics 

HZU6.2Z

Absolute Maximum Ratings

Item

Power dissipation

Junction temperature

Storage temperature

Note: See Fig.2.

Symbol

Pd *

Tj

Tstg

Value

200

150

−55 to +150

(Ta = 25°C)

Unit

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test Condition

Zener voltage

VZ

Reverse current

IR

Capacitance

C

Dynamic resistance rd

5.90

—

6.50

V

IZ = 5 mA, 40 ms pulse

—

—

3

µA VR = 5.5 V

—

8.0

8.5

pF VR = 0 V, f = 1 MHz

—

—

60

Ω

IZ = 5 mA

Rev.2.00 Jun 16, 2005 page 2 of 5

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