IL5(2004) 查看數據表（PDF） - Vishay Semiconductors
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IL5 Datasheet PDF : 9 Pages
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Output
Parameter
Collector-emitter capacitance
Collector - base capacitance
Emitter - base capacitance
Collector-emitter leakage
current
Collector-emitter saturation
voltage
Base-emitter voltage
DC forward current gain
DC forward current gain
saturated
Thermal resistance junction to
lead
Test condition
VCE = 5.0 V, f = 1.0 MHz
VCB = 5.0 V, f = 1.0 MHz
VEB = 5.0 V, f = 1.0 MHz
VCE = 10 V
ICE = 1.0 mA, IB = 20 µA
VCE = 10 V, IB = 20 µA
VCE = 10 V, IB = 20 µA
VCE = 0.4 V, IB = 20 µA
IL1/ IL2/ IL5
Vishay Semiconductors
Symbol
Min
CCE
CCB
CEB
ICEO
VCESAT
VBE
HFE
200
HFEsat
120
Rthjl
Typ.
Max
Unit
6.8
pF
8.5
pF
11
pF
5.0
50
nA
0.25
V
0.65
V
650
1800
400
600
500
K/W
Coupler
Parameter
Capacitance (input-output)
Insulation resistance
Test condition
VI-O = 0 V, f = 1.0 MHz
VI-O = 500 V
Symbol
Min
Typ.
Max
Unit
CIO
0.6
pF
RS
1014
Ω
Current Transfer Ratio
Parameter
Current Transfer Ratio
(collector-emitter saturated)
Test condition
IF = 10 mA, VCE = 0.4 V
Current Transfer Ratio
(collector-emitter)
IF = 10 mA, VCE = 10 V
Current Transfer Ratio
(collector-base)
IF = 10 mA, VCB = 9.3 V
Part
Symbol
Min
Typ.
Max
Unit
IL1
CTRCEsat
75
%
IL2
CTRCEsat
170
%
IL5
CTRCEsat
100
%
IL1
CTRCE
20
80
300
%
IL2
CTRCE
100
200
500
%
IL5
CTRCE
50
130
400
%
IL1
CTRCB
0.25
%
IL2
CTRCB
0.25
%
IL5
CTRCB
0.25
%
Switching Non-saturated
Parameter
Current
Delay
Test condition
Symbol
IF
tD
Unit
mA
µs
IL1
20
0.8
IL2
4.0
1.7
IL5
10
1.7
Rise time
Storage
Fall time
Propagation
H-L
VCE = 5.0 V, RL = 75 Ω, tP measured at 50 % of output
tr
tS
tf
tPHL
µs
µs
µs
µs
1.9
0.2
1.4
0.7
2.6
0.4
2.2
1.2
2.6
0.4
2.2
1.1
Propagation
L-H
tPLH
µs
1.4
2.3
2.5
Document Number 83612
Rev. 1.5, 26-Oct-04
www.vishay.com
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